Microelectronic Devices and Circuits
As taught in: Spring 2009
Course Features
Course Description
Required Text
Howe, Roger, and Charles Sodini. Microelectronics: An Integrated Approach. Upper Saddle River, NJ: Prentice Hall, 1996. ISBN: 9780135885185.
Reference Texts
Fonstad, Clifton. Microelectronic Devices and Circuits. New York, NY: McGraw-Hill, 1994. ISBN: 9780070214965.
Sedra, Adel, and Kenneth Smith. Microelectronic Circuits. New York, NY: Oxford University Press, 2007. ISBN: 9780195338836.
Horenstein, Mark. Microelectronic Circuits and Devices. New York, NY: Pearson, 1996. ISBN: 9780536846761.
Modular Series on Solid State Devices
Pierret, Robert. Semiconductor Fundamentals. Vol. I. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1988. ISBN: 9780201122954.
Neudeck, George. The PN Junction Diode. Vol. II. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1988. ISBN: 9780201122961.
———. The Bipolar Junction Transistor. Vol. III. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1989. ISBN: 9780201122978.
Pierret, Robert. Field Effect Devices. Vol. IV. 2nd ed. Upper Saddle River, NJ: Prentice Hall, 1990. ISBN: 9780201122985.
Lecture Notes
Abbreviations
MOS = metal-on-silicon
MOSFET = metal-oxide-semiconductor field-effect transistor
NMOS = n-type metal-oxide-semiconductor
CMOS = complementary metal-oxide-semiconducto
r
LEC # TOPICS LECTURE NOTES 1 6.012 outline: grading, ethics Overview of semiconductor applications, silicon integrated circuit technology (PDF) 2 Intrinsic semiconductors, electrons and holes, bond model, generation recombination and thermal equilibrium; doping, donors, acceptors, compensation (PDF) 3 Carrier transport, drift velocity, drift current density, diffusion current density (PDF) 4 The p-n junction, carrier concentration and potential in thermal equilibrium, 60mV rule (PDF) 5 The p-n junction in thermal equilibrium (PDF) 6 Introduction to the MOS structure, MOS capacitor in thermal equilibrium (PDF) 7 MOS capacitor under applied bias; accumulation, depletion, and inversion regions (PDF) 8 MOSFET physical structure, circuit symbol and terminal characteristics, MOS transistor characteristics (PDF) 9 MOS transistor, backgate effect, MOSFET in saturation (PDF) 10 MOSFET small-signal model 11 Digital logic concepts, inverter characteristics, logic levels and noise margins, transient characteristics, inverter circuits, NMOS/resistor loads (PDF) 12 NMOS/current source load, CMOS inverter, static analysis (PDF) 13 CMOS inverter, propagation delay model, static CMOS gates 14 p-n junction diode terminal characteristics, minority carrier concentration under forward and reverse bias (PDF) 15 Short base approximation, steady state diffusion equation with currents in p-n junction (PDF) 16 p-n junction diode circuit model, large signal static model, small signal model, diffusion capacitance (PDF) 17 Introduction of bipolar junction transistor, terminal characteristics, forward active bias, current gain (PDF) 18 Reverse active mode and saturation, the Ebers-Moll model (PDF) 19 Single stage amplifiers, two port small signal model, common source amplifier with resistor and current source supply (PDF) 20 Common base/gate amplifier, common collector/drain (PDF) 21 Review frequency domain analysis; current gain frequency response of common emitter amplifier (PDF) 22 Voltage gain frequency response of common emitter amplifier, full analysis of common emitter, the Miller approximation (PDF) 23 Open circuit time constant analysis, common-gate (CG) and common-drain (CD) amplifiers (PDF) 24 Multistage amplifiers, cascading small signal two port models (PDF) 25 DC coupling, voltage sources, MOS current sources, current sources and sinks (PDF) 26 Analyzing complex circuits, course wrap-up (PDF)
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